Cadmium Telluride Iodine MVB Photovoltaic Solar Cell Thin Film
In the pursuit of creating efficient CdTe p-n homojunctions, we developed iodine (I) n-type doped CdTe using Cadmium Iodide (CdI2) as a dopant in varying concentrations (1018 cm-3, 1019 cm-3 and 1020 atoms·cm-3 target concentrations) in CdTe. Iodide doped crystals were grown using a Modified Vertical Bridgman furnace (MVB). Single crystals were characterized using XRD (X-Ray Diffraction), Hall effect, IR (Infrared) Microscopy, UV-VIS-NIR (Ultraviolet-Visible-Near infrared Spectroscopy) and FTIR (Fourier Transform Infrared Spectroscopy). Partners at the National Renewable Energy Laboratory (NREL) also provided data for Hall Effect and Two Photon Excitation Time Resolved Photoluminescence (2PE TRPL) of wafers and films. Photoluminescence mapping (PL mapping) was obtained from Klar scientific, and glow discharge mass spectrometry (GDMS) for purity and final doping concentration was obtained from the National Research Council Canada. Due to poor carrier properties in the crystals as-grown, two annealing treatments were explored, in either tellurium or cadmium vapor. Homojunctions were made at NREL by depositing n-type films from these crystals on p-type single crystals, CdTe:P grown and WSU. The n-type films were created using the close-space sublimation epitaxy (CSSE) process. Herein is reported the results of the grown CdTe:I crystals and, to a lesser extent, the properties of the CdTe:I thin films formed by CSSE.
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Details
Title
CADMIUM TELLURIDE
Creators
Samuel Bigbee-Hansen
Contributors
John S McCloy (Advisor)
Colin C Merriman (Committee Member)
Matthew D McCluskey (Committee Member)
Awarding Institution
Washington State University
Academic Unit
Voiland College of Engineering and Architecture
Theses and Dissertations
Master of Science (MS), Washington State University