Thesis
Chemical polishing of cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) for molecular beam epitaxy (MBE) applications
Washington State University
Master of Science (MS), Washington State University
2017
Handle:
https://hdl.handle.net/2376/101869
Abstract
Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) are compound-semiconductors having wide range of applications over a broad range of energy spectrum from Infrared (IR) to Gamma-rays. Wide bandgap, high average atomic number makes them promising materials for room-temperature detection. CdZnTe (4% Zn) provides best lattice match for HgCdTe epitaxial deposition used for IR detection. Surface preparation plays a significant role in determining the performance of devices incorporating these semiconductors. Especially applications like Molecular Beam Epitaxial deposition have a tight constraint on the quality of surfaces required to achieve a good quality detector. This study analyzes the effect of various process parameters on the end quality of the surface obtained and the necessary care to be taken during the chemical polishing process. Polished surface is analyzed using Atomic Force Microscopy (AFM) and Positron Annihilation Spectroscopy (PAS) and the results are presented.
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Details
- Title
- Chemical polishing of cadmium zinc telluride (CdZnTe) and cadmium telluride (CdTe) for molecular beam epitaxy (MBE) applications
- Creators
- Saketh Kakkireni
- Contributors
- Kelvin G. Lynn (Degree Supervisor)
- Awarding Institution
- Washington State University
- Academic Unit
- Mechanical and Materials Engineering, School of
- Theses and Dissertations
- Master of Science (MS), Washington State University
- Publisher
- Washington State University; [Pullman, Washington] :
- Identifiers
- 99900525282401842
- Language
- English
- Resource Type
- Thesis