Thesis
Fabrication, characterization and modeling of honey and zirconium oxide based non-volatile resistive random access memory
Washington State University
Master of Science (MS), Washington State University
05/2021
DOI:
https://doi.org/10.7273/000004289
Handle:
https://hdl.handle.net/2376/118580
Abstract
In this work the resistive switching properties of a natural bio-organic material - honey thin film synthesized by a solution process and an inorganic oxide - (ZrO2) thin film deposited by plasma-enhanced atomic layer deposition (PE-ALD), are explored. A dried honey film was sandwiched in between a copper oxide (CuxO) bottom electrode and a copper (Cu) top electrode to form a metal-insulator-metal structure on a glass substrate. Current-voltage measurements showed that the device exhibited bipolar switching characteristics with Ohmic conduction behavior and a read memory window of 2.6 V. When biased at a read voltage of 0.2 V, the data retention time is over an interval of 104 s and ON/OFF ratio is in the order of 105. These properties prove the potential of honey based organic resistive switching devices for “green” electronics and nonvolatile memory applications. A 10 nm-thick ZrO2 film as an active switching layer sandwiched between aluminium (Al) top electrode and silver (Ag) bottom electrode. Bipolar resistive switching characteristics were demonstrated by current-voltage measurements with a read memory window of 6.6 V, ON/OFF current ratio nearly 105 and a retention time of 104 s. Current conduction at low resistance states follows Ohm’s law, while at high resistance state governed by space charge limited conduction. These indicate the switching mechanism is attributed to filamentary conduction. A SPICE model was applied to model the device, with simulation results measurement data in good agreement. This study proves the potential applications of PE-ALD ZrO2 for non-volatile resistive random-access memories.
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Details
- Title
- Fabrication, characterization and modeling of honey and zirconium oxide based non-volatile resistive random access memory
- Creators
- Aleksey Andrey Sivkov
- Contributors
- Feng Zhao (Advisor) - Washington State University, Engineering and Computer Science (VANC), School of
- Awarding Institution
- Washington State University
- Academic Unit
- Mechanical and Materials Engineering, School of
- Theses and Dissertations
- Master of Science (MS), Washington State University
- Publisher
- Washington State University
- Identifiers
- 99900896411501842
- Language
- English
- Resource Type
- Thesis