Thesis
Gallium nitride high mobility electron transistors for power amplification applications
Washington State University
Master of Science (MS), Washington State University
2019
Handle:
https://hdl.handle.net/2376/102134
Abstract
With increasing demand for high power density switching devices and a more advanced cellular network, i.e. 5G, on the impending horizon, wide-bandgap semiconductors are quickly becoming the de facto semiconductor device type to serve this need, of which the Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) device in particular has seen increasing demand due to its unique combination of favorable compound material characteristics and highly efficient operation. In this project, GaN HEMT devices are designed, fabricated, and characterized, and a 12-element, empirical equivalent circuit for GaN HEMTs is modeled. For modeling, published intrinsic and extrinsic characteristics of a selected device were analyzed and used as a template for creating a Symbolically Defined Device (SSD) model in Keysight's Advanced Design System (ADS) software. This model was then used to obtain a key device characterization parameter, namely current-voltage (I-V) curves, through a curve-fitting process utilizing analytical equations. The AlGaN/GaN HEMT device design and fabrication process flow is discussed, after which the device is characterized and analyzed with regards to the impact of nitride stress liners on AlGaN/GaN HEMT device performance.
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Details
- Title
- Gallium nitride high mobility electron transistors for power amplification applications
- Creators
- Oliver Peter Amnuayphol
- Contributors
- Feng Zhao (Degree Supervisor)
- Awarding Institution
- Washington State University
- Academic Unit
- Electrical Engineering and Computer Science, School of
- Theses and Dissertations
- Master of Science (MS), Washington State University
- Publisher
- Washington State University; [Pullman, Washington] :
- Identifiers
- 99900525082101842
- Language
- English
- Resource Type
- Thesis