Thesis
SPDT switch, attenuator and 3-bit passive phase shifter based on a novel SiGe PIN diode
Washington State University
Master of Science (MS), Washington State University
2009
Handle:
https://hdl.handle.net/2376/100322
Abstract
This thesis explores the possible uses for a recently developed custom PIN diode SPST switch in SiGe BiCMOS process. The PIN diode utilises an octagonal anode shape for an improved insertion loss while maintaining high isolation and was measured to be advantageous to conventional MOSFET switches at X and Ku frequency bands. This work will cover the following implementations of the novel octagonal PIN diode: SPDT switch, 3-bit attenuator and 4-bit passive highly linear phase shifter. The SPDT switch features the series-shunt and series-shunt-shunt diode combination for RX and TX arm, respectively. This combination was chosen for balancing between minimizing the insertion loss and maximizing the isolation. The combination of seriesshunt-shunt 25 µm2 - 50 µm2 – 50 µm2 PIN diodes results in an isolation of 53.7 to 45.5 dB and an insertion loss of 0.74 to 1.4 dB over the frequency range of 6 – 18 GHz. Such low insertion loss and high isolation will make this SPDT switch design attractive for beam forming systems that incorporate X and Ku band transceivers. The PIN diode 3-bit attenuator provides for an accurate attenuation with a resolution of 1 dB over the wide frequency range of 6 – 16 GHz. One bit occupies only 0.069 mm2 which results in a small overall area. The passive topology provides for an increased P1dB input referred point. Due to the high integrative ability of a novel PIN diode, this attenuator can be fully implemented on SoC. A fully integrated highly linear 4-bit phase shifter utilises the hybrid LPF/HPF switched topologies to provide a resolution of 22.5°. The return input/output losses of the entire structure are measured to be 20 dB ± 5 dB, the input-referred IP3 to be 37 dBm, and the phase variation to be ±1.8° over the range of 14.5 – 15.5 GHz. This phase shifter draws an average current of 3.5 mA from the 3.3 V source. The use of differential inductors instead of transmission lines helps minimise the layout area which results in lower cost implementation for SoC beam forming applications.
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Details
- Title
- SPDT switch, attenuator and 3-bit passive phase shifter based on a novel SiGe PIN diode
- Creators
- Alex Olegovich Mikul
- Contributors
- Deukyuoun Heo (Degree Supervisor)
- Awarding Institution
- Washington State University
- Academic Unit
- Electrical Engineering and Computer Science, School of
- Theses and Dissertations
- Master of Science (MS), Washington State University
- Publisher
- Washington State University; Pullman, Wash. :
- Identifiers
- 99900525191301842
- Language
- English
- Resource Type
- Thesis