Thesis
Simulation of study on electrostatics and electrical transport in semiconductor nanowire Schottky diodes
Washington State University
Master of Science (MS), Washington State University
2014
Handle:
https://hdl.handle.net/2376/106745
Abstract
In this thesis, the electrostatics and electrical transport behavior in semiconductor nanowire Schottky diodes are studied by three-dimensional finite-element electrostatics simulations. The simulation presents a significant deviation of the dependence of depletion region width on the bias at different doping levels, compared to the relation in the bulk Schottky model that exhibits different electrostatics properties in nanowire Schottky junctions. Additionally, the simulation of the current-voltage characteristics is in agreement with the experimental measurement. However, the simulation suggests that the standard analytical model, as commonly used on previous studies, is insufficient to extract the important parameters, such as ideality factor and Schottky barrier height. These findings pave a way for Schottky-based nanostructured development of improved performance.
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Details
- Title
- Simulation of study on electrostatics and electrical transport in semiconductor nanowire Schottky diodes
- Creators
- Cheng-Han Hsu
- Contributors
- Yi Gu (Degree Supervisor)
- Awarding Institution
- Washington State University
- Academic Unit
- Mechanical and Materials Engineering, School of
- Theses and Dissertations
- Master of Science (MS), Washington State University
- Publisher
- Washington State University; [Pullman, Washington] :
- Identifiers
- 99900525399501842
- Language
- English
- Resource Type
- Thesis