Journal article
A high-efficient CMOS RF power amplifier with automatic adaptive bias control
IEEE microwave and wireless components letters, Vol.16(11), pp.615-617
2006
Handle:
https://hdl.handle.net/2376/117518
Abstract
A 2.4-GHz Doherty power amplifier (PA) is developed in 0.18-mum CMOS technology. An automatic adaptive bias control circuit is integrated with the auxiliary PA to improve the overall performance of the PA. Operated at 3V, theP1dBand associated power-added-efficiency (PAE) of the PA are 21dBm and 33%, respectively. At the output power 6-dB backoff fromP1dB, the PAE remains 21%. The limited PAE degradation at backoff power levels makes the PA suitable for the applications with high peak-to-average power ratio.
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Details
- Title
- A high-efficient CMOS RF power amplifier with automatic adaptive bias control
- Creators
- Yi-Jan Emery CHEN - Graduate Institute of Electronics Engineering, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, Province of ChinaChih-Yun LIU - Graduate Institute of Electronics Engineering, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, Province of ChinaTang-Nian LUO - Graduate Institute of Electronics Engineering, Graduate Institute of Communication Engineering, and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, Province of ChinaDeukhyoun HEO - School of Electrical Engineering and Computer Science, Washington State University, Pullman, WA 99164, United States
- Publication Details
- IEEE microwave and wireless components letters, Vol.16(11), pp.615-617
- Academic Unit
- Electrical Engineering and Computer Science News
- Publisher
- Institute of Electrical and Electronics Engineers; New York, NY
- Identifiers
- 99900547804401842
- Language
- English
- Resource Type
- Journal article