Journal article
An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling
IEEE transactions on microwave theory and techniques, Vol.48(12), pp.2361-2369
12/2000
Handle:
https://hdl.handle.net/2376/116523
Abstract
An improved deep submicrometer (0.25 /spl mu/m) MOSFET radio-frequency (RF) large signal model that incorporates a new breakdown current model and drain-to-substrate nonlinear coupling was developed and investigated using various experiments. An accurate breakdown model is required for deep submicrometer MOSFETs due to their relatively low breakdown voltage. For the first time, this RF nonlinear model incorporates the breakdown voltage turnover trend into a continuously differentiable channel current model and a new nonlinear coupling circuit between the drain and the lossy substrate. The robustness of the model is verified with measured pulsed I-V, S-parameters, power characteristics, harmonic distortion, and intermodulation distortion levels at different input and output termination conditions, operating biases, and frequencies.
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Details
- Title
- An improved deep submicrometer MOSFET RF nonlinear model with new breakdown current model and drain-to-substrate nonlinear coupling
- Creators
- Deuk Hyoun Heo - Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USAEdward GebaraYi-Jan Emery ChenSeung-Yup YooM HamaiYoungsuk SuhJoy Laskar
- Publication Details
- IEEE transactions on microwave theory and techniques, Vol.48(12), pp.2361-2369
- Academic Unit
- School of Electrical Engineering and Computer Science
- Publisher
- IEEE
- Identifiers
- 99900547541301842
- Language
- English
- Resource Type
- Journal article