Journal article
Deposition of plasma-polymerized acetylene by an intense pulsed RF plasma source
IEEE transactions on plasma science, Vol.18(6), pp.945-947
12/1990
Handle:
https://hdl.handle.net/2376/115359
Abstract
An inductively coupled, intense, pulsed RF plasma source deposited plasma-polymerized acetylene at a rate of 127 AA per discharge. The potassium bromide substrate was located 18-cm downstream from the RF coil. A puff valve admitted parent acetylene gas just before the transient RF current was applied. Fourier transform infrared (FTIR) spectra showed that carbon-to-carbon double bonds were formed. Scanning-electron-microscope images showed that the film thickness after 79 discharges was 1 mu m. A photodiode showed substantial light emission for about 30 mu s during each discharge.< >
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Details
- Title
- Deposition of plasma-polymerized acetylene by an intense pulsed RF plasma source
- Creators
- P.D Pedrow - Washington State Univ., Pullman, WA, USAA.M Nasiruddin - Washington State Univ., Pullman, WA, USAR Mahalingam - Washington State Univ., Pullman, WA, USA
- Publication Details
- IEEE transactions on plasma science, Vol.18(6), pp.945-947
- Academic Unit
- Chemical Engineering and Bioengineering, School of; Electrical Engineering and Computer Science, School of
- Publisher
- IEEE
- Identifiers
- 99900547997101842
- Language
- English
- Resource Type
- Journal article