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Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model
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Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model

A Raghavan, S Venkataraman, B Banerjee, Youngsuk Youngsuk Suh, Deukhyoun Deukhyoun Heo and J Laskar
IEEE journal of solid-state circuits, Vol.38(9), pp.1443-1450
09/2003
Handle:
https://hdl.handle.net/2376/106072

Abstract

Temperature dependence Current measurement Gallium arsenide Predictive models Heterojunction bipolar transistors Scattering parameters Capacitance measurement Data mining Electrical resistance measurement Parameter extraction

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