Journal article
Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model
IEEE journal of solid-state circuits, Vol.38(9), pp.1443-1450
09/2003
Handle:
https://hdl.handle.net/2376/106072
Abstract
A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accompanied by a simple extraction process, which requires only dc current-voltage (I-V) and multibias-point small-signal S-parameter measurements. All the current-source model parameters, including the self-heating parameters, are directly extracted from measured forward I-V data at different ambient temperatures. The distributed base-collector capacitance and base resistance are extracted from measured S-parameters using a new technique. The extraction procedure is fast, accurate, and inherently minimizes the average squared-error between measured and modeled data, thereby eliminating the need for further optimization following parameter extraction. This modeling methodology is successfully applied to predict the dc, small-signal S-parameter, and output fundamental and harmonic power characteristics of an InGaP/GaAs HBT, over a wide range of temperatures.
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Details
- Title
- Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model
- Creators
- A Raghavan - Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USAS Venkataraman - Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USAB Banerjee - Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USAYoungsuk Youngsuk SuhDeukhyoun Deukhyoun HeoJ Laskar
- Publication Details
- IEEE journal of solid-state circuits, Vol.38(9), pp.1443-1450
- Publisher
- IEEE
- Identifiers
- 99900546805001842
- Language
- English
- Resource Type
- Journal article