Journal article
Effect of film thickness on the evolution of annealing texture in sputtered copper films
Journal of electronic materials, Vol.34(12), pp.1500-1508
12/2005
Handle:
https://hdl.handle.net/2376/105457
Abstract
Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) films was investigated by electron backscatter diffraction (EBSD). Analysis of films was performed both in situ using a heating stage, and by ex-situ observation of microstructural evolution. It was noted that not only is the Cu film texture and grain size a function of film thickness, but also that the fraction of twin boundaries present in the material is strongly dependent upon film thickness. This is explained by means of a simple model that considers the energy of the system. Surface and interface energies, as well as grain boundary energies for random high angle boundaries and for twin boundaries (both coherent and incoherent planes) are used in the determination. The model was shown to accurately predict the twin boundary size in self-annealed films. This type of analysis also results in a texture map similar to that presented by Thompson,12 but incorporates the development and effect of twin boundaries, so that additional texture components (in addition to 111 and 100 fibers) are included.
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Details
- Title
- Effect of film thickness on the evolution of annealing texture in sputtered copper films
- Creators
- N Park - School of Mechanical and Materials Engineering Washington State University 99164-2920 Pullman WAD Field - School of Mechanical and Materials Engineering Washington State University 99164-2920 Pullman WAM Nowell - TexSEM Laboratories/EDAX 84020 Draper UTP Besser - Advanced Micro Devices 94088-3453 Sunnyvale CA
- Publication Details
- Journal of electronic materials, Vol.34(12), pp.1500-1508
- Academic Unit
- Mechanical and Materials Engineering, School of
- Publisher
- Springer-Verlag; New York
- Identifiers
- 99900546665401842
- Language
- English
- Resource Type
- Journal article