Journal article
Effect of varying the nanostructured porous-Si process parameters on the performance of Pd-doped hydrogen sensor
Sensors and actuators. B, Chemical, Vol.127(1), pp.74-81
2007
Handle:
https://hdl.handle.net/2376/112625
Abstract
The process parameters of a nanoporous silicon-based Pd-doped H
2 system were varied to investigate the sensor response. In particular, the influence of anodization current density, etching time and active layer (Pd) thickness were correlated to the sensor's response time and stability. The structure and morphology of the pores along with Pd distribution in the porous matrix has been found to govern the sensor response. Additionally, formation of Pd
2Si in samples etched for 45
min and nucleation of silica nanowires for 12
nm thick Pd samples were experimentally observed. The change in electrical resistance was monitored while testing the device in the range of 0–1.5% H
2. The optimal process parameters for stable and rapid sensing of H
2 were found in samples etched for 30
min subjected to an anodic current density of 10.2
mA/cm
2.
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Details
- Title
- Effect of varying the nanostructured porous-Si process parameters on the performance of Pd-doped hydrogen sensor
- Creators
- P.K SekharA SineS Bhansali
- Publication Details
- Sensors and actuators. B, Chemical, Vol.127(1), pp.74-81
- Academic Unit
- Engineering and Computer Science (VANC), School of
- Publisher
- Elsevier B.V
- Identifiers
- 99900547451601842
- Language
- English
- Resource Type
- Journal article