Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe

Journal article

Peer reviewed

Raji Soundararajan and Kelvin G Lynn

Journal of applied physics, Vol.112(7), p.73111

10/2012

Handle:

https://hdl.handle.net/2376/112923

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Title: Effects of excess tellurium and growth parameters on the band gap defect levels in CdxZn1−xTe
Creators: Raji Soundararajan
Kelvin G Lynn
Publication Details: Journal of applied physics, Vol.112(7), p.73111
Identifiers: 99900547725901842
Language: English
Resource Type: Journal article