Journal article
Formation of isolated Zn vacancies in ZnO single crystals by absorption of ultraviolet radiation: a combined study using positron annihilation, photoluminescence, and mass spectroscopy
Physical review letters, Vol.111(1), pp.017401-017401
07/05/2013
Handle:
https://hdl.handle.net/2376/108726
PMID: 23863026
Abstract
Positron annihilation spectra reveal isolated zinc vacancy (V(Zn)) creation in single-crystal ZnO exposed to 193-nm radiation at 100 mJ/cm(2) fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the V(Zn) acceptor level at ~100 meV to the conduction band. The observed V(Zn) density profile and hyperthermal Zn(+) ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon-a novel photoelectronic process for controlled V(Zn) creation in ZnO.
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Details
- Title
- Formation of isolated Zn vacancies in ZnO single crystals by absorption of ultraviolet radiation: a combined study using positron annihilation, photoluminescence, and mass spectroscopy
- Creators
- Enamul H Khan - Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814, USA. enamul_khan@wsu.eduMarc H WeberMatthew D McCluskey
- Publication Details
- Physical review letters, Vol.111(1), pp.017401-017401
- Academic Unit
- Center for Materials Research; Physics and Astronomy, Department of
- Publisher
- United States
- Identifiers
- 99900547359601842
- Language
- English
- Resource Type
- Journal article