Journal article
Hydrogen in bulk and nanoscale ZnO
Physica. B, Condensed matter, Vol.376(1), pp.690-693
2006
Handle:
https://hdl.handle.net/2376/113360
Abstract
Zinc oxide (ZnO) is a wide-band gap semiconductor that has attracted resurgent interest as an electronic material for a range of applications. In our work, we have focused on the properties of hydrogen donors in ZnO. In bulk, single-crystal ZnO doped with hydrogen or deuterium, infrared (IR) absorption peaks corresponding to O–H and O–D stretch modes were observed at 3326.3 and 2470.3
cm
−1, respectively, at liquid-helium temperatures. IR spectroscopy using polarized light showed that the O–H dipoles are aligned along an angle 111° to the
c-axis. The slight negative shift of the O–H mode as a function of hydrostatic pressure suggests that the hydrogen resides in an
anti-bonding orientation. The O–H complexes are unstable, perhaps due to the formation of “hidden” H
2 molecules. As dimensions approach the nanoscale, the vastly increased surface-to-volume ratio leads to interesting phenomena. At moderate annealing temperatures (350
°C), hydrogen interacts with the nanoparticles, resulting in a dramatic increase in electrical conductivity, free-carrier absorption, and IR reflectivity.
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Details
- Title
- Hydrogen in bulk and nanoscale ZnO
- Creators
- M.D McCluskeyS.J JokelaW.M Hlaing Oo
- Publication Details
- Physica. B, Condensed matter, Vol.376(1), pp.690-693
- Academic Unit
- Physics and Astronomy, Department of
- Publisher
- Elsevier B.V
- Identifiers
- 99900548046001842
- Language
- English
- Resource Type
- Journal article