Journal article
Hydrogen in oxide semiconductors
Journal of materials research, Vol.27(17), pp.2190-2198
09/14/2012
Handle:
https://hdl.handle.net/2376/114683
Abstract
Oxide semiconductors exhibit a range of physical properties and have potential optical, electronic, and energy applications. Transparent conducting oxides (TCOs) are currently used in products such as flat-panel displays. The prevailing n-type conductivity in these materials has historically been attributed to native defects such as oxygen vacancies. Recent calculations and experiments, however, have provided evidence that native defects are actually not responsible in majority of the cases. Hydrogen, on the other hand, does act as a shallow donor and can dramatically affect the electrical properties of oxides. In addition to contributing to n-type doping, hydrogen also passivates dangling bonds in cation vacancies and passivates acceptor dopants. Some oxides contain “hidden hydrogen,” perhaps H2 molecules, which dissociate at elevated temperatures. In this article, the many roles of hydrogen in zinc oxide, tin dioxide, titanium dioxide, indium (III) oxide, gallium (III) oxide, and strontium titanate are reviewed. The emphasis is on fundamental electronic, structural, and vibrational properties of hydrogen complexes, as determined by experiment and theory.
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Details
- Title
- Hydrogen in oxide semiconductors
- Creators
- Matthew D McCluskey - Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814Marianne C Tarun - Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814Samuel T Teklemichael - Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814
- Publication Details
- Journal of materials research, Vol.27(17), pp.2190-2198
- Academic Unit
- Physics and Astronomy, Department of
- Publisher
- Cambridge University Press; New York, USA
- Number of pages
- 9
- Identifiers
- 99900548102501842
- Language
- English
- Resource Type
- Journal article