Journal article
Hydrogen-related defects in bulk ZnO
MRS proceedings, Vol.1167, pp.83-87
2009
Handle:
https://hdl.handle.net/2376/105897
Abstract
Zinc oxide (ZnO) has attracted resurgent interest as an active material for energy-efficient lighting applications. An optically transparent crystal, ZnO emits light in the blue-to-UV region of the spectrum. The efficiency of the emission is higher than more “conventional” materials such as GaN, making ZnO a strong candidate for solid-state white lighting. Despite its advantages, however, ZnO suffers from a major drawback: as grown, it contains a relatively high level of donors. These unwanted defects compensate acceptors or donate free electrons to the conduction band, thereby keeping the Fermi level in the upper half of the band gap. This paper reviews recent work on hydrogen donors and nitrogen-hydrogen complexes in ZnO.
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Details
- Title
- Hydrogen-related defects in bulk ZnO
- Creators
- Matthew D McCluskey - attmcc@wsu.edu, Washington State University, Pullman, Washington, United StatesSlade J Jokela - jokela@mail.wsu.edu, Washington State University, Pullman, Washington, United StatesMarianne C Tarun - ariannetarun@yahoo.com, Washington State University, Pullman, Washington, United States
- Contributors
- F Shahedipour-Sandvik (Editor)E.F Schubert (Editor)I.D Bell (Editor)V Tilak (Editor)A.W Bett (Editor)
- Publication Details
- MRS proceedings, Vol.1167, pp.83-87
- Academic Unit
- Physics and Astronomy, Department of
- Publisher
- Cambridge University Press; New York, USA
- Number of pages
- 5
- Identifiers
- 99900546776401842
- Language
- English
- Resource Type
- Journal article