Incorporation of Interfacial Intermetallic Morphology in Fracture Mechanism Map for Sn-Ag-Cu Solder Joints

Z Huang; P Kumar; I Dutta; R Sidhu; M Renavikar; R Mahajan

doi:10.1007/s11664-013-2755-0

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Incorporation of Interfacial Intermetallic Morphology in Fracture Mechanism Map for Sn-Ag-Cu Solder Joints

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Incorporation of Interfacial Intermetallic Morphology in Fracture Mechanism Map for Sn-Ag-Cu Solder Joints

Z Huang, P Kumar, I Dutta, R Sidhu, M Renavikar and R Mahajan

Journal of electronic materials, Vol.43(1), pp.88-95

01/2014

DOI: https://doi.org/10.1007/s11664-013-2755-0

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https://hdl.handle.net/2376/106659

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Abstract

Solid State Physics

effective thickness of IMC

Solder joint fracture

Optical and Electronic Materials

Electronics and Microelectronics, Instrumentation

Characterization and Evaluation of Materials

Material Science

fracture mechanism map (FMM)

A fracture mechanism map (FMM) is a powerful tool which correlates the fracture behavior of a material to its microstructural characteristics in an explicit and convenient way. In the FMM for solder joints, an effective thickness of the interfacial intermetallic compound (IMC) layer (t eff) and the solder yield strength (σ ys,eff) are used as abscissa and ordinate axes, respectively, as these two predominantly affect the fracture behavior of solder joints. Earlier, a definition of t eff, based on the uniform thickness of IMC (t u) and the average height of the IMC scallops (t s), was proposed and shown to aptly explain the fracture behavior of solder joints on Cu. This paper presents a more general definition of t eff that is more widely applicable to a range of metallizations, including Cu and electroless nickel immersion gold (ENIG). Using this new definition of t eff, mode I FMM for SAC387/Cu joints has been updated and its validity was confirmed. A preliminary FMM for SAC387/Cu joints with ENIG metallization is also presented.

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Title: Incorporation of Interfacial Intermetallic Morphology in Fracture Mechanism Map for Sn-Ag-Cu Solder Joints
Creators: Z Huang - School of Mechanical and Materials Engineering Washington State University Pullman WA 99164 USA
P Kumar - Department of Materials Engineering Indian Institute of Science Bangalore 560012 India
I Dutta - School of Mechanical and Materials Engineering Washington State University Pullman WA 99164 USA
R Sidhu - Intel Corp., Assembly Technology Development 5000 W. Chandler Blvd. Chandler AZ 85226 USA
M Renavikar - Intel Corp., Assembly Technology Development 5000 W. Chandler Blvd. Chandler AZ 85226 USA
R Mahajan - Intel Corp., Assembly Technology Development 5000 W. Chandler Blvd. Chandler AZ 85226 USA
Publication Details: Journal of electronic materials, Vol.43(1), pp.88-95
Academic Unit: Electrical Engineering and Computer Science, School of; Mechanical and Materials Engineering, School of
Publisher: Springer US; Boston
Identifiers: 99900546781001842
Language: English
Resource Type: Journal article