Journal article
Interaction between localized and extended modes of oxygen in silicon
Physica. B, Condensed matter, Vol.340-342, pp.514-517
12/31/2003
Handle:
https://hdl.handle.net/2376/104711
Abstract
The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes (LVMs) decay into phonons. In this study, we have investigated interstitial oxygen (Oi) in silicon as a model ‘laboratory’ for such local-extended mode interactions. Using hydrostatic pressure and infrared spectroscopy, we brought the stretch mode of 18Oi in silicon into resonance with a second harmonic of the 18Oi resonant mode. The resonant interaction results in an avoided crossing between the modes. In addition to this anti-crossing behaviour, the line width abruptly increases, due to a dramatic decrease in lifetime as the LVM enters the two-phonon continuum. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and line widths.
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Details
- Title
- Interaction between localized and extended modes of oxygen in silicon
- Creators
- M.D McCluskey - Department of Physics, Washington State University, Pullman, WA 99164, USAL Hsu - Department of Physics, Washington State University, Pullman, WA 99164, USAJ.L Lindström - Department of Physics, Division of Solid State Physics, Lund University, Lund, Sweden
- Publication Details
- Physica. B, Condensed matter, Vol.340-342, pp.514-517
- Academic Unit
- Physics and Astronomy, Department of
- Publisher
- Elsevier B.V
- Identifiers
- 99900546743801842
- Language
- English
- Resource Type
- Journal article