Journal article
Magnetotransport properties of high quality Co:ZnO and Mn:ZnO single crystal pulsed laser deposition films: pitfalls associated with magnetotransport on high resistivity materials
Review of scientific instruments, Vol.81(6), pp.063902-063902
06/2010
Handle:
https://hdl.handle.net/2376/105547
PMID: 20590247
Abstract
The electrical resistivity values for a series of pure and doped (Co, Mn, Al) ZnO epitaxial films grown by pulsed laser deposition were measured with equipment designed for determining the direct current resistivity of high resistance samples. Room-temperature resistances ranging from 7 x 10(1) to 4 x 10(8) Omega/sq were measured on vacuum-reduced cobalt-doped ZnO, (Al,Co) co-doped ZnO, pure cobalt-doped ZnO, Mn-doped ZnO, and undoped ZnO. Using a four-point collinear geometry with gold spring-loaded contacts, resistivities were measured from 295 to 5 K for resistances of < approximately 10(12) Omega/sq. In addition, magnetoresistance and Hall effect were measured as a function of temperature for select samples. Throughout the investigation, samples were also measured on commercially available instrumentation with good agreement. The challenges of transport measurements on high resistivity samples are discussed, along with some offered solutions to those challenges.
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Details
- Title
- Magnetotransport properties of high quality Co:ZnO and Mn:ZnO single crystal pulsed laser deposition films: pitfalls associated with magnetotransport on high resistivity materials
- Creators
- John S McCloy - Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99354, USAJoseph V RyanTimothy DroubayTiffany C KasparScott ChambersDavid C Look
- Publication Details
- Review of scientific instruments, Vol.81(6), pp.063902-063902
- Academic Unit
- Mechanical and Materials Engineering, School of
- Publisher
- United States
- Identifiers
- 99900546563101842
- Language
- English
- Resource Type
- Journal article