Journal article
Nanosecond Melting and Recrystallization in Shock-Compressed Silicon
Physical review letters, Vol.121(13), pp.135701-135701
09/28/2018
Handle:
https://hdl.handle.net/2376/106246
PMID: 30312076
Abstract
In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ∼31-33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.
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Details
- Title
- Nanosecond Melting and Recrystallization in Shock-Compressed Silicon
- Creators
- Stefan J Turneaure - Institute for Shock Physics, Washington State University, Pullman, Washington 99164, USASurinder M Sharma - Institute for Shock Physics, Washington State University, Pullman, Washington 99164, USAY M Gupta - Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164, USA
- Publication Details
- Physical review letters, Vol.121(13), pp.135701-135701
- Academic Unit
- Physics and Astronomy, Department of; Institute for Shock Physics
- Publisher
- United States
- Identifiers
- 99900546870201842
- Language
- English
- Resource Type
- Journal article