Journal article
Resonant interaction between localized and extended vibrational modes in Si: 18O under pressure
Physical review letters, Vol.90(9), pp.095505-095505
03/07/2003
Handle:
https://hdl.handle.net/2376/118069
PMID: 12689236
Abstract
The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes decay into phonons. Interstitial oxygen (O(i)) in silicon is a model system for studying such interactions. Using hydrostatic pressure, we have brought the antisymmetric stretch mode of (18)O(i) in silicon into resonance with the second harmonic of the (18)O(i) resonant mode. Infrared spectroscopy was used to observe an anticrossing between these two vibrational modes at pressures near 4 GPa. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and linewidths.
Metrics
9 Record Views
Details
- Title
- Resonant interaction between localized and extended vibrational modes in Si: 18O under pressure
- Creators
- L Hsu - Department of Physics, Washington State University, Pullman, Washington 99164-2814, USAM D McCluskeyJ L Lindström
- Publication Details
- Physical review letters, Vol.90(9), pp.095505-095505
- Academic Unit
- Physics and Astronomy, Department of
- Publisher
- United States
- Identifiers
- 99900548135901842
- Language
- English
- Resource Type
- Journal article