Journal article
Selective growth of silica nanowires in silicon catalysed by Pt thin film
Nanotechnology, Vol.17(18), pp.4606-4613
09/28/2006
Handle:
https://hdl.handle.net/2376/102004
PMID: 21727584
Abstract
Selective growth of amorphous silica nanowires on a silicon wafer deposited with Pt thin film is reported. The mechanism of nanowire growth has been established to follow the vapour liquid solid (VLS) model via the PtSi phase acting as the catalyst. Nanowires grow with diameters ranging from 50 to 500 nm. These bottom-up grown nanowires exhibit photoluminescence with a stable emission of blue light at 430 nm under excitation. The effect of varying the seed layer thickness (Pt film) from 2 to 100 nm has been studied. It is observed that, above 10 nm thickness, a continuous layer of Pt(2)Si re-solidifies on the surface, inhibiting the growth of nanowires. The selectivity to the Pt thickness has been exploited to create regions of nanowires connected to conducting silicide (Pt(2)Si) simultaneously in a single furnace treatment. This novel approach has opened the gateways for realizing hybrid interconnects in silicon for various nano-optical applications such as the localization of light, low-dimensional waveguides for functional microphotonics, scanning near-field microscopy, and nanoantennae.
Metrics
11 Record Views
Details
- Title
- Selective growth of silica nanowires in silicon catalysed by Pt thin film
- Creators
- Praveen Kumar Sekhar - Nanomaterials and Nanomanufacturing Research Center, Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620, USASenthil N SambandamDinesh K SoodShekhar Bhansali
- Publication Details
- Nanotechnology, Vol.17(18), pp.4606-4613
- Academic Unit
- Engineering and Computer Science (VANC), School of
- Publisher
- England
- Identifiers
- 99900546542701842
- Language
- English
- Resource Type
- Journal article