Journal article
Sources of n-type conductivity in ZnO
Physica. B, Condensed matter, Vol.401, pp.355-357
2007
Handle:
https://hdl.handle.net/2376/106951
Abstract
Zinc oxide (ZnO) is a strong candidate for energy-efficient white lighting and numerous optoelectronic applications. Hydrogen impurities play important roles, good and bad, in the pursuit of reliable p-type doping of ZnO. In pervious work, we identified hydrogen donors with the back-bonded or “anti-bonding” orientation, with an angle of 111° to the
c-axis. It is possible, however, that these hydrogen donors are complexed with another defect. Impurities besides hydrogen are also donors in as-grown ZnO. Results from secondary ion mass spectroscopy (SIMS) show significant concentrations of Al in samples of bulk single-crystal ZnO obtained from Cermet, Inc., Ga and B in samples from Eagle-Picher, and Si in both.
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Details
- Title
- Sources of n-type conductivity in ZnO
- Creators
- M.D McCluskeyS.J Jokela
- Publication Details
- Physica. B, Condensed matter, Vol.401, pp.355-357
- Academic Unit
- Physics and Astronomy, Department of
- Publisher
- Elsevier B.V
- Identifiers
- 99900546712401842
- Language
- English
- Resource Type
- Journal article