Journal article
Study of defect levels in CdTe using thermoelectric effect spectroscopy
Journal of electronic materials, Vol.35(6), pp.1333-1340
06/2006
Handle:
https://hdl.handle.net/2376/117513
Abstract
We have studied the defect levels in as grown and post growth processed cadmium telluride (CdTe) using thermoelectric effect spectroscopy (TEES) and thermally stimulated current (TSC) techniques. We have extracted the thermal energy (Eth) and trapping cross section (σth) for the defect levels using the initial rise and variable heating rate methods. We have identified 10 different defect levels in the crystals. Thermal ionization energy values obtained experimentally were compared to theoretical values of the transition-energy levels of intrinsic and extrinsic defects and defect complexes in CdTe determined by first-principles band-structure calculations. On the basis of this comparison, we have associated the observed ionization levels with various native defects and impurity complexes.
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Details
- Title
- Study of defect levels in CdTe using thermoelectric effect spectroscopy
- Creators
- Raji Soundararajan - Center for Materials Research Washington State University 99164 Pullman WAKelvin Lynn - Center for Materials Research Washington State University 99164 Pullman WASalah Awadallah - Center for Materials Research Washington State University 99164 Pullman WACsaba Szeles - eV PRODUCTS, a division of II–VI Inc. 16056 Saxonburg PASu-Huai Wei - National Renewable Energy Laboratory 80401 Golden CO
- Publication Details
- Journal of electronic materials, Vol.35(6), pp.1333-1340
- Publisher
- Springer-Verlag; New York
- Identifiers
- 99900548355001842
- Language
- English
- Resource Type
- Journal article