Journal article
Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs
IEEE transactions on electron devices, Vol.48(9), pp.1844-1849
09/2001
Handle:
https://hdl.handle.net/2376/114788
Abstract
RF-breakdown was studied in bulk GaN and in GaN MESFETs using a full band Monte Carlo simulator. It was found that in bulk materials, increasing the frequency of an applied RF field would result in a lower overall impact ionization rate and consequently lead to higher breakdown fields. It was also found that the RF-breakdown voltage of devices increases with increasing frequency of the applied large signal RF excitation. The frequency dependence of RF-breakdown and the difference between RF and dc-breakdown is explained based on the time response of the particle energy to the change in the applied RF excitation.
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Details
- Title
- Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs
- Creators
- M Farahmand - Movaz Networks, Atlanta, GA, USAK.F BrennanE GebaraDeukhyoun Deukhyoun HeoYoung Young SuhJ Laskar
- Publication Details
- IEEE transactions on electron devices, Vol.48(9), pp.1844-1849
- Publisher
- IEEE
- Identifiers
- 99900548272901842
- Language
- English
- Resource Type
- Journal article