Journal article
Zn Vacancy Formation Energy and Diffusion Coefficient of CVT ZnO Crystals in the Sub-Surface Micron Region
Scientific reports, Vol.8(1), pp.13446-8
12/01/2018
Handle:
https://hdl.handle.net/2376/110377
PMCID: PMC6128886
PMID: 30194333
Abstract
By using positron annihilation spectroscopy methods, we have experimentally demonstrated the creation of isolated zinc vacancy concentrations >10
20
cm
−3
in chemical vapor transport (CVT)-grown ZnO bulk single crystals. X-ray diffraction ω-rocking curve (XRC) shows the good quality of ZnO single crystal with (110) orientation. The depth analysis of Auger electron spectroscopy indicates the atomic concentrations of Zn and O are almost stoichiometric and constant throughout the measurement. Boltzmann statistics are applied to calculate the zinc vacancy formation energies (
E
f
) of ~1.3–1.52 eV in the sub-surface micron region. We have also applied Fick’s 2
nd
law to calculate the zinc diffusion coefficient to be ~1.07 × 10
−14
cm
2
/s at 1100 °C. The zinc vacancies began annealing out at 300 °C and, by heating in the air, were completely annealed out at 700 °C.
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Details
- Title
- Zn Vacancy Formation Energy and Diffusion Coefficient of CVT ZnO Crystals in the Sub-Surface Micron Region
- Creators
- Narendra S Parmar - Seoul, 02792 Republic of KoreaLynn A Boatner - Oak Ridge, TN 37831 USAKelvin G Lynn - Pullman, WA 99164 USAJi-Won Choi - Seoul, 02792 Republic of Korea
- Publication Details
- Scientific reports, Vol.8(1), pp.13446-8
- Publisher
- Nature Publishing Group UK; London
- Identifiers
- 99900547109401842
- Language
- English
- Resource Type
- Journal article